elektronische bauelemente S2N7002W 115 ma, 60 v, r ds(on) = 7.5 n-ch small signal mosfet 18-dec-2009 rev. b page 1 of 3 top view a l c b d g h j f k e 1 2 3 1 2 3 sot - 3 23 rohs compliant product a suffix of -c specifies halogen & lead-free features ? low on-resistance ? low gate threshold voltage ? low input capacitance ? fast switching speed ? low input/output leakage ? ultra-small surface mount package package information absolute maximum ratings parameter symbol ratings unit drain-source voltage v dds 60 vdc drain-gate voltage(r gs =1.0m ) v dgr 60 vdc continuous drain current 1 (t a =25c) 115 continuous drain current 1 (t a =100c) i d 75 pulsed drain current 2 i dm 800 madc continuous gate-source voltage v gs 20 vdc non-repetitive gate-source voltage(t p Q 50 s) v gsm 40 vpk thermal characteristics total device dissipation fr-5 board 3 (t a =25c) 225 mw derating above 25c p d 1.8 mw/c thermal resistance, junction to ambient r ja 556 c/w junction and storage temperature t j , t stg -55~150 c notes: 1. the power dissipation of the package may result in a lower continuous drain current. 2. pulse test: pulse width Q 300 s, duty cycle Q 2.0% 3. fr-5=1.0*0.75*0.62 in. millimeter millimeter ref. min. max. ref. min. max. a 1.80 2.20 g 0.00 0.10 b 2.00 2.40 h 0.425 ref. c 1.15 1.35 j 0.10 0.25 d 0.80 1.00 k - - e 1.20 1.40 l 0.650 typ. f 0.30 0.40 1 gate 2 source drain 3 x=date code drain 3 72 1 gate 2 source drain 3 6c 1 gate 2 source x x
elektronische bauelemente S2N7002W 115 ma, 60 v, r ds(on) = 7.5 n-ch small signal mosfet 18-dec-2009 rev. b page 2 of 3 electrical characteristics (t a = 25 c unless otherwise specified) parameter symbol min. typ. max. unit test conditions off characteristics drain-source breakdown voltage v (br)dss 60 - - vdc v gs = 0, i d = 10 adc t j =25c - - 1.0 zero gate voltage drain current t j =125c i dss - - 500 adc v gs =0, v ds = 60vdc gate-body leakage current, forward i gssf - - 100 nadc v gs =20vdc gate-body leakage current, reverse i gssr - - -100 nadc v gs =-20vdc on characteristics 1 gate threshold voltage v gs(th) 1.0 1.6 2.5 vdc v ds = v gs , i d =250 adc on-state drain current i d(on) 500 - - ma v ds R 2.0v ds(on) ,v gs =10vdc - - 3.75 v gs =10vdc, i d =500madc static drain-source on-state voltage v ds(on) - - 0.375 vdc v gs =5vdc, i d =50madc - 1.4 7.5 v gs =10vdc, i d =500madc static drain-source on-state resistance (t a =25c) r ds(on) - 1.8 7.5 v gs =5vdc, i d =50madc - - 13.5 v gs =10vdc, i d =500madc static drain-source on-state resistance (t a =125c) r ds(on) - - 13.5 v gs =5vdc, i d =50madc forward transconductance g fs 80 - - mmhos v ds 2v R ds(on), i d =200madc dynamic characteristics input capacitance c iss - 17 50 pf v ds =25vdc, v gs =0, f=1mhz output capacitance c oss - 10 25 pf v ds =25vdc, v gs =0, f=1mhz reverse transfer capacitance c rss - 2.5 5.0 pf v ds =25vdc, v gs =0, f=1mhz switching characteristics 1 turn-on delay time td (on) - 7 20 turn-off delay time td (off) - 11 40 ns v dd =25vdc, ,i d ? 500madc r g =25 ,r l =50 , v gen =10v body-drain diode ratings diode forward on-voltage v sd - - -1.5 vdc i s =11.5madc,v gs =10v source current continuous i s - - -115 madc source current pulsed i sm - - -800 madc notes: 1. pulse test: pulse width Q 300 s, duty cycle Q 2.0%
elektronische bauelemente S2N7002W 115 ma, 60 v, r ds(on) = 7.5 n-ch small signal mosfet 18-dec-2009 rev. b page 3 of 3 characteristic curve (n-ch, contd)
|
